2009. 6. 10 1/4 semiconductor technical data kma3d7p20sa p-ch trench mosfet revision no : 1 general description it s mainly suitable for use as a load switch. features h v dss =-20v, i d =-3.7a h drain to source on-state resistance r ds(on) =76m ? (max.) @ v gs =-4.5v r ds(on) =112m ? (max.) @ v gs =-2.5v maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q max 0.1. 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q pin connection (top view) characteristic symbol p-ch unit drain to source voltage v dss -20 v gate to source voltage v gss ? 12 v drain current dc@ta=25 ? (note1) i d -3.7 a pulsed (note1) i dp -16 drain to source diode forward current i s -16 a drain power dissipation ta=25 ? (note1) p d 1.25 w ta=100 ? (note1) 0.6 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note1) r thja 100 ? /w 2 3 1 gs d 1 2 3 knh note1) surface mounted on 1 u ? 1 u fr4 board, t ? 5sec.
2009. 6. 10 2/4 kma3d7p20sa revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =-250 a -20 - - v drain cut-off current i dss v gs =0v, v ds =-20v - - -1 a gate to source leakage current i gss v gs = ? 12v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =-250 a -0.55 - -1.5 v drain to source on resistance r ds(on) v gs =-4.5v, i d =-2.8a (note2) - 65 76 m ? v gs =-2.5v, i d =-2.3a (note2) - 90 112 dynamic input capacitance c iss v ds =-10v, f=1mhz, v gs =0v - 443 - pf output capacitance c oss - 92 - reverse transfer capacitance c rss - 51 - total gate charge q g v ds =-10v, i d =-2.8a, v gs =-4.5v (note2) - 4.37 - nc gate to source charge q gs - 0.54 - gate to drain charge q gd - 1.54 - turn-on delay time t d(on) v dd =-10v, v gs =-4.5v , i d =-2.8a, r g =6 ? (note2) - 6.2 - ns turn-on rise time t r - 18 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 33 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =-1.0a (note2) - -0.8 -1.2 v note2) pulse test : pulse width <300 k , duty cycle < 2%
2009. 6. 10 3/4 kma3d7p20sa revision no : 1
2009. 6. 10 4/4 kma3d7p20sa revision no : 1
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